Design and fabrication of a SiOx/ITO double-layer anti-reflective coating for heterojunction silicon solar cells
Identifieur interne : 000F47 ( Main/Repository ); précédent : 000F46; suivant : 000F48Design and fabrication of a SiOx/ITO double-layer anti-reflective coating for heterojunction silicon solar cells
Auteurs : RBID : Pascal:13-0303849Descripteurs français
- Pascal (Inist)
- Couche ITO, Couche double, Revêtement antiréfléchissant, Hétérojonction, Cellule solaire silicium, Simulation système, Logiciel, Addition étain, Pastille électronique, Cellule solaire, Courant court circuit, Dispositif expérimental, Taux conversion, Tracé rayon, Perte transmission, Matériau amorphe, Evaluation performance, Oxyde de silicium, Semiconducteur, Oxyde d'indium, Matériau cristallin, Silicium, SiOx, ITO.
- Wicri :
- concept : Logiciel, Matériau amorphe.
English descriptors
- KwdEn :
- Amorphous material, Antireflection coating, Conversion rate, Crystalline material, Double layers, Experimental device, Heterojunction, ITO layers, Indium oxide, Performance evaluation, Ray tracing, Semiconductor materials, Short circuit currents, Silicon, Silicon oxides, Silicon solar cells, Software, Solar cell, System simulation, Tin addition, Transmission loss, Wafer.
Abstract
In this contribution optical simulations of both flat and textured heterojunction silicon solar cells are presented and verified experimentally. Using Advanced Semiconductor Analysis (ASA) software, we optimize a double-layer anti-reflective (AR) coating, which has an additional SiOx film on the top of the existing indium tin oxide (ITO) coating. Our approach is based on maximizing the absorbance of the crystalline silicon (c-Si) wafer, which is strongly correlated with the solar cell's short circuit current (Jsc). Our simulations show that for a flat heterojunction silicon solar cell c-Si absorbance can increase by using a double-layer AR coating instead of a single-layer AR coating. As predicted by the simulations, experimental devices show corresponding Jsc increase, leading to the increase of the solar cell efficiency. On a textured heterojunction silicon solar cell the incident light travels an oblique path through the AR coating and we use an advanced ray-tracing model to optimize the single and double-layer AR coating for this case. Our simulations show that for the textured heterojunction silicon solar cell, reflection losses are lower but parasitic absorption losses in the ITO and amorphous silicon layers play a more important role. Using a double-layer AR coating not only reduces reflection losses further, but because a thinner ITO layer can be used it also reduces parasitic absorption losses. Experimentally, our textured heterojunction silicon solar cell with a double-layer AR coating shows that the Jsc (active area) of 40.5 mA/cm2 and an efficiency of 19.0%.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Design and fabrication of a SiO<sub>x</sub>/ITO double-layer anti-reflective coating for heterojunction silicon solar cells</title><author><name sortKey="Zhang, D" uniqKey="Zhang D">D. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Materials and Devices, Delft University of Technology, P.O. Box 5031</s1><s2>2600 GA Delft</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2600 GA Delft</wicri:noRegion></affiliation></author><author><name sortKey="Digdaya, I A" uniqKey="Digdaya I">I. A. Digdaya</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Materials and Devices, Delft University of Technology, P.O. Box 5031</s1><s2>2600 GA Delft</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2600 GA Delft</wicri:noRegion></affiliation></author><author><name sortKey="Santbergen, R" uniqKey="Santbergen R">R. Santbergen</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Materials and Devices, Delft University of Technology, P.O. Box 5031</s1><s2>2600 GA Delft</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2600 GA Delft</wicri:noRegion></affiliation></author><author><name sortKey="Van Swaaij, R A C M M" uniqKey="Van Swaaij R">R. A. C. M. M. Van Swaaij</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Materials and Devices, Delft University of Technology, P.O. Box 5031</s1><s2>2600 GA Delft</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2600 GA Delft</wicri:noRegion></affiliation></author><author><name sortKey="Bronsveld, P" uniqKey="Bronsveld P">P. Bronsveld</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ECN Solar Energy, P.O. Box 1</s1><s2>1755 ZG Petten</s2><s3>NLD</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>1755 ZG Petten</wicri:noRegion></affiliation></author><author><name sortKey="Zeman, M" uniqKey="Zeman M">M. Zeman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Photovoltaic Materials and Devices, Delft University of Technology, P.O. Box 5031</s1><s2>2600 GA Delft</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>2600 GA Delft</wicri:noRegion></affiliation></author><author><name sortKey="Van Roosmalen, I A M" uniqKey="Van Roosmalen I">I. A. M. Van Roosmalen</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ECN Solar Energy, P.O. Box 1</s1><s2>1755 ZG Petten</s2><s3>NLD</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>1755 ZG Petten</wicri:noRegion></affiliation></author><author><name sortKey="Weeber, A W" uniqKey="Weeber A">A. W. Weeber</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>ECN Solar Energy, P.O. Box 1</s1><s2>1755 ZG Petten</s2><s3>NLD</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Pays-Bas</country><wicri:noRegion>1755 ZG Petten</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0303849</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0303849 INIST</idno><idno type="RBID">Pascal:13-0303849</idno><idno type="wicri:Area/Main/Corpus">000752</idno><idno type="wicri:Area/Main/Repository">000F47</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Amorphous material</term><term>Antireflection coating</term><term>Conversion rate</term><term>Crystalline material</term><term>Double layers</term><term>Experimental device</term><term>Heterojunction</term><term>ITO layers</term><term>Indium oxide</term><term>Performance evaluation</term><term>Ray tracing</term><term>Semiconductor materials</term><term>Short circuit currents</term><term>Silicon</term><term>Silicon oxides</term><term>Silicon solar cells</term><term>Software</term><term>Solar cell</term><term>System simulation</term><term>Tin addition</term><term>Transmission loss</term><term>Wafer</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Couche ITO</term><term>Couche double</term><term>Revêtement antiréfléchissant</term><term>Hétérojonction</term><term>Cellule solaire silicium</term><term>Simulation système</term><term>Logiciel</term><term>Addition étain</term><term>Pastille électronique</term><term>Cellule solaire</term><term>Courant court circuit</term><term>Dispositif expérimental</term><term>Taux conversion</term><term>Tracé rayon</term><term>Perte transmission</term><term>Matériau amorphe</term><term>Evaluation performance</term><term>Oxyde de silicium</term><term>Semiconducteur</term><term>Oxyde d'indium</term><term>Matériau cristallin</term><term>Silicium</term><term>SiOx</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Logiciel</term><term>Matériau amorphe</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this contribution optical simulations of both flat and textured heterojunction silicon solar cells are presented and verified experimentally. Using Advanced Semiconductor Analysis (ASA) software, we optimize a double-layer anti-reflective (AR) coating, which has an additional SiO<sub>x</sub> film on the top of the existing indium tin oxide (ITO) coating. Our approach is based on maximizing the absorbance of the crystalline silicon (c-Si) wafer, which is strongly correlated with the solar cell's short circuit current (J<sub>sc</sub>). Our simulations show that for a flat heterojunction silicon solar cell c-Si absorbance can increase by using a double-layer AR coating instead of a single-layer AR coating. As predicted by the simulations, experimental devices show corresponding J<sub>sc</sub> increase, leading to the increase of the solar cell efficiency. On a textured heterojunction silicon solar cell the incident light travels an oblique path through the AR coating and we use an advanced ray-tracing model to optimize the single and double-layer AR coating for this case. Our simulations show that for the textured heterojunction silicon solar cell, reflection losses are lower but parasitic absorption losses in the ITO and amorphous silicon layers play a more important role. Using a double-layer AR coating not only reduces reflection losses further, but because a thinner ITO layer can be used it also reduces parasitic absorption losses. Experimentally, our textured heterojunction silicon solar cell with a double-layer AR coating shows that the J<sub>sc</sub> (active area) of 40.5 mA/cm<sup>2</sup> and an efficiency of 19.0%.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>117</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Design and fabrication of a SiO<sub>x</sub>/ITO double-layer anti-reflective coating for heterojunction silicon solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (D.)</s1></fA11><fA11 i1="02" i2="1"><s1>DIGDAYA (I. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>SANTBERGEN (R.)</s1></fA11><fA11 i1="04" i2="1"><s1>VAN SWAAIJ (R. A. C. M. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>BRONSVELD (P.)</s1></fA11><fA11 i1="06" i2="1"><s1>ZEMAN (M.)</s1></fA11><fA11 i1="07" i2="1"><s1>VAN ROOSMALEN (I. A. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>WEEBER (A. W.)</s1></fA11><fA14 i1="01"><s1>Photovoltaic Materials and Devices, Delft University of Technology, P.O. Box 5031</s1><s2>2600 GA Delft</s2><s3>NLD</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>ECN Solar Energy, P.O. Box 1</s1><s2>1755 ZG Petten</s2><s3>NLD</s3><sZ>5 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>132-138</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000501971110210</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>15 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0303849</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>In this contribution optical simulations of both flat and textured heterojunction silicon solar cells are presented and verified experimentally. Using Advanced Semiconductor Analysis (ASA) software, we optimize a double-layer anti-reflective (AR) coating, which has an additional SiO<sub>x</sub> film on the top of the existing indium tin oxide (ITO) coating. Our approach is based on maximizing the absorbance of the crystalline silicon (c-Si) wafer, which is strongly correlated with the solar cell's short circuit current (J<sub>sc</sub>). Our simulations show that for a flat heterojunction silicon solar cell c-Si absorbance can increase by using a double-layer AR coating instead of a single-layer AR coating. As predicted by the simulations, experimental devices show corresponding J<sub>sc</sub> increase, leading to the increase of the solar cell efficiency. On a textured heterojunction silicon solar cell the incident light travels an oblique path through the AR coating and we use an advanced ray-tracing model to optimize the single and double-layer AR coating for this case. Our simulations show that for the textured heterojunction silicon solar cell, reflection losses are lower but parasitic absorption losses in the ITO and amorphous silicon layers play a more important role. Using a double-layer AR coating not only reduces reflection losses further, but because a thinner ITO layer can be used it also reduces parasitic absorption losses. Experimentally, our textured heterojunction silicon solar cell with a double-layer AR coating shows that the J<sub>sc</sub> (active area) of 40.5 mA/cm<sup>2</sup> and an efficiency of 19.0%.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Couche ITO</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>ITO layers</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche double</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Double layers</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Revêtement antiréfléchissant</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Antireflection coating</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Revestimiento antirreflexión</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Hétérojonction</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Heterojunction</s0><s5>04</s5></fC03><fC03 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l="FRE"><s0>ITO</s0><s4>INC</s4><s5>83</s5></fC03><fN21><s1>287</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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